Formation of CuIn(S, Se)2 thin film by thermal diffusion of sulfur and selenium vapours into Cu-In alloy within a closed graphite container
Identifieur interne : 015184 ( Main/Repository ); précédent : 015183; suivant : 015185Formation of CuIn(S, Se)2 thin film by thermal diffusion of sulfur and selenium vapours into Cu-In alloy within a closed graphite container
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Abstract
The formation of CuIn(S,Se)2 thin films by thermal diffusion of sulfur (S) and selenium (Se) vapours into co-sputtered Cu-In alloy within a closed-space graphite container is reported. All films were characterized by X-ray diffraction (XRD). scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDX), Four-point-probe and hot-probe measurements. Cu-In alloy films with composition varying from Cu-rich to In-rich were deposited. The synthesized In-rich films yielded CuIn5(S,Se)8 spinel compound which gradually transformed into a single phase CuIn(S,Se)2 as the film composition approached the Cu-rich region. The morphology of the CuIn5(S,Se)8 was found to differ from the stoichiometric and Cu-rich CuIn(S,Se)2 as observed from SEM. EDX composition analysis of the films showed a Cu/In ratio varying from 0.36 to 1.54 and a (S + Se)/(Cu + In) varying from 0.97 to 1.32. The amount of S incorporated in the films was found to differ with changes in the composition. The resistivity of the films ranged between 10-1 and 107 Ω cm and it strongly followed the change in the alloy film composition.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Formation of CuIn(S, Se)<sub>2</sub> thin film by thermal diffusion of sulfur and selenium vapours into Cu-In alloy within a closed graphite container</title><author><name sortKey="Adurodija, F O" uniqKey="Adurodija F">F. O. Adurodija</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>New Energy Department, Korea Institute of Energy Research, 71-2, Jang-dong</s1><s2>Yusong, Taejon 305-343</s2><s3>KOR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Corée du Sud</country><wicri:noRegion>Yusong, Taejon 305-343</wicri:noRegion></affiliation></author><author><name sortKey="Song, J" uniqKey="Song J">J. Song</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>New Energy Department, Korea Institute of Energy Research, 71-2, Jang-dong</s1><s2>Yusong, Taejon 305-343</s2><s3>KOR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Corée du Sud</country><wicri:noRegion>Yusong, Taejon 305-343</wicri:noRegion></affiliation></author><author><name sortKey="Asia, I O" uniqKey="Asia I">I. O. Asia</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Chemistry, Faculty of Natural Sciences, Edo State University</s1><s2>Ekpoma</s2><s3>NGA</s3><sZ>3 aut.</sZ></inist:fA14><country>Nigeria</country><wicri:noRegion>Ekpoma</wicri:noRegion></affiliation></author><author><name sortKey="Yoon, K H" uniqKey="Yoon K">K. H. Yoon</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>New Energy Department, Korea Institute of Energy Research, 71-2, Jang-dong</s1><s2>Yusong, Taejon 305-343</s2><s3>KOR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Corée du Sud</country><wicri:noRegion>Yusong, Taejon 305-343</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">99-0365857</idno><date when="1999">1999</date><idno type="stanalyst">PASCAL 99-0365857 INIST</idno><idno type="RBID">Pascal:99-0365857</idno><idno type="wicri:Area/Main/Corpus">014924</idno><idno type="wicri:Area/Main/Repository">015184</idno></publicationStmt><seriesStmt><idno type="ISSN">0927-0248</idno><title level="j" type="abbreviated">Sol. energy mater. sol. cells</title><title level="j" type="main">Solar energy materials and solar cells</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Chalcopyrite</term><term>Copper Selenides</term><term>Copper Sulfides</term><term>Experimental study</term><term>Indium Selenides</term><term>Microstructure</term><term>Preparation</term><term>Solar cell</term><term>Thin film</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Cellule solaire</term><term>Chalcopyrite</term><term>Cuivre Séléniure</term><term>Indium Séléniure</term><term>Cuivre Sulfure</term><term>Couche mince</term><term>Etude expérimentale</term><term>Préparation</term><term>Microstructure</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The formation of CuIn(S,Se)<sub>2</sub> thin films by thermal diffusion of sulfur (S) and selenium (Se) vapours into co-sputtered Cu-In alloy within a closed-space graphite container is reported. All films were characterized by X-ray diffraction (XRD). scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDX), Four-point-probe and hot-probe measurements. Cu-In alloy films with composition varying from Cu-rich to In-rich were deposited. The synthesized In-rich films yielded CuIn<sub>5</sub>(S,Se)<sub>8</sub> spinel compound which gradually transformed into a single phase CuIn(S,Se)<sub>2</sub> as the film composition approached the Cu-rich region. The morphology of the CuIn<sub>5</sub>(S,Se)<sub>8</sub> was found to differ from the stoichiometric and Cu-rich CuIn(S,Se)<sub>2</sub> as observed from SEM. EDX composition analysis of the films showed a Cu/In ratio varying from 0.36 to 1.54 and a (S + Se)/(Cu + In) varying from 0.97 to 1.32. The amount of S incorporated in the films was found to differ with changes in the composition. The resistivity of the films ranged between 10<sup>-1</sup> and 10<sup>7</sup> Ω cm and it strongly followed the change in the alloy film composition.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0927-0248</s0></fA01><fA03 i2="1"><s0>Sol. energy mater. sol. cells</s0></fA03><fA05><s2>58</s2></fA05><fA06><s2>3</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Formation of CuIn(S, Se)<sub>2</sub> thin film by thermal diffusion of sulfur and selenium vapours into Cu-In alloy within a closed graphite container</s1></fA08><fA11 i1="01" i2="1"><s1>ADURODIJA (F. O.)</s1></fA11><fA11 i1="02" i2="1"><s1>SONG (J.)</s1></fA11><fA11 i1="03" i2="1"><s1>ASIA (I. O.)</s1></fA11><fA11 i1="04" i2="1"><s1>YOON (K. H.)</s1></fA11><fA14 i1="01"><s1>New Energy Department, Korea Institute of Energy Research, 71-2, Jang-dong</s1><s2>Yusong, Taejon 305-343</s2><s3>KOR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Chemistry, Faculty of Natural Sciences, Edo State University</s1><s2>Ekpoma</s2><s3>NGA</s3><sZ>3 aut.</sZ></fA14><fA20><s1>287-297</s1></fA20><fA21><s1>1999</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>18016</s2><s5>354000085712840050</s5></fA43><fA44><s0>0000</s0><s1>© 1999 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>20 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>99-0365857</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Solar energy materials and solar cells</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>The formation of CuIn(S,Se)<sub>2</sub> thin films by thermal diffusion of sulfur (S) and selenium (Se) vapours into co-sputtered Cu-In alloy within a closed-space graphite container is reported. All films were characterized by X-ray diffraction (XRD). scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDX), Four-point-probe and hot-probe measurements. Cu-In alloy films with composition varying from Cu-rich to In-rich were deposited. The synthesized In-rich films yielded CuIn<sub>5</sub>(S,Se)<sub>8</sub> spinel compound which gradually transformed into a single phase CuIn(S,Se)<sub>2</sub> as the film composition approached the Cu-rich region. The morphology of the CuIn<sub>5</sub>(S,Se)<sub>8</sub> was found to differ from the stoichiometric and Cu-rich CuIn(S,Se)<sub>2</sub> as observed from SEM. EDX composition analysis of the films showed a Cu/In ratio varying from 0.36 to 1.54 and a (S + Se)/(Cu + In) varying from 0.97 to 1.32. The amount of S incorporated in the films was found to differ with changes in the composition. The resistivity of the films ranged between 10<sup>-1</sup> and 10<sup>7</sup> Ω cm and it strongly followed the change in the alloy film composition.</s0></fC01><fC02 i1="01" i2="X"><s0>001D06C02D1</s0></fC02><fC02 i1="02" i2="X"><s0>230</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Cellule solaire</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Solar cell</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Célula solar</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Chalcopyrite</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Chalcopyrite</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Calcopirita</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Cuivre Séléniure</s0><s2>NC</s2><s2>NA</s2><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Copper Selenides</s0><s2>NC</s2><s2>NA</s2><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Cobre Seleniuro</s0><s2>NC</s2><s2>NA</s2><s5>03</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Indium Séléniure</s0><s2>NC</s2><s2>NA</s2><s5>04</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Indium Selenides</s0><s2>NC</s2><s2>NA</s2><s5>04</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Indio Seleniuro</s0><s2>NC</s2><s2>NA</s2><s5>04</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Cuivre Sulfure</s0><s2>NC</s2><s2>NA</s2><s5>05</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Copper Sulfides</s0><s2>NC</s2><s2>NA</s2><s5>05</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Cobre Sulfuro</s0><s2>NC</s2><s2>NA</s2><s5>05</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Couche mince</s0><s5>07</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Thin film</s0><s5>07</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Capa fina</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Etude expérimentale</s0><s5>08</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Experimental study</s0><s5>08</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Estudio experimental</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Préparation</s0><s5>14</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Preparation</s0><s5>14</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Preparación</s0><s5>14</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Microstructure</s0><s5>15</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Microstructure</s0><s5>15</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Microestructura</s0><s5>15</s5></fC03><fN21><s1>235</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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